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Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

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Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser. / Cemlyn, Ben; Adams, Mike; Harbord, Edmund; Li, Nianqiang; Henning, Ian D.; Oulton, Ruth; Korpijärvi, Ville Markus; Guina, Mircea.

In: Semiconductor Science and Technology, Vol. 33, No. 9, 094005, 01.08.2018.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Cemlyn, B, Adams, M, Harbord, E, Li, N, Henning, ID, Oulton, R, Korpijärvi, VM & Guina, M 2018, 'Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser', Semiconductor Science and Technology, vol. 33, no. 9, 094005. https://doi.org/10.1088/1361-6641/aad42e

APA

Cemlyn, B., Adams, M., Harbord, E., Li, N., Henning, I. D., Oulton, R., ... Guina, M. (2018). Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser. Semiconductor Science and Technology, 33(9), [094005]. https://doi.org/10.1088/1361-6641/aad42e

Vancouver

Cemlyn B, Adams M, Harbord E, Li N, Henning ID, Oulton R et al. Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser. Semiconductor Science and Technology. 2018 Aug 1;33(9). 094005. https://doi.org/10.1088/1361-6641/aad42e

Author

Cemlyn, Ben ; Adams, Mike ; Harbord, Edmund ; Li, Nianqiang ; Henning, Ian D. ; Oulton, Ruth ; Korpijärvi, Ville Markus ; Guina, Mircea. / Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser. In: Semiconductor Science and Technology. 2018 ; Vol. 33, No. 9.

Bibtex - Download

@article{525350c93f114520a1dba2d352d170e1,
title = "Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser",
abstract = "Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.",
keywords = "spin amplification, spin laser, spin VCSEL",
author = "Ben Cemlyn and Mike Adams and Edmund Harbord and Nianqiang Li and Henning, {Ian D.} and Ruth Oulton and Korpij{\"a}rvi, {Ville Markus} and Mircea Guina",
year = "2018",
month = "8",
day = "1",
doi = "10.1088/1361-6641/aad42e",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing",
number = "9",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

AU - Cemlyn, Ben

AU - Adams, Mike

AU - Harbord, Edmund

AU - Li, Nianqiang

AU - Henning, Ian D.

AU - Oulton, Ruth

AU - Korpijärvi, Ville Markus

AU - Guina, Mircea

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.

AB - Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.

KW - spin amplification

KW - spin laser

KW - spin VCSEL

U2 - 10.1088/1361-6641/aad42e

DO - 10.1088/1361-6641/aad42e

M3 - Article

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

M1 - 094005

ER -