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Noise characterization of Ge/Si photodetectors

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication8th IEEE International Conference on Group IV Photonics, GFP 2011
Pages290-292
Number of pages3
DOIs
Publication statusPublished - 2011
Publication typeA4 Article in a conference publication
Event8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom
Duration: 14 Sep 201116 Sep 2011

Conference

Conference8th IEEE International Conference on Group IV Photonics, GFP 2011
CountryUnited Kingdom
CityLondon
Period14/09/1116/09/11

Abstract

We invesyigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.

Keywords

  • Ge/Si photodetectors, near infrared, noise