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Noise characterization of Ge/Si photodetectors

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Noise characterization of Ge/Si photodetectors. / Colace, Lorenzo; Scacchi, Andrea; Assanto, Gaetano.

8th IEEE International Conference on Group IV Photonics, GFP 2011. 2011. p. 290-292 6053793.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Colace, L, Scacchi, A & Assanto, G 2011, Noise characterization of Ge/Si photodetectors. in 8th IEEE International Conference on Group IV Photonics, GFP 2011., 6053793, pp. 290-292, 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, United Kingdom, 14/09/11. https://doi.org/10.1109/GROUP4.2011.6053793

APA

Colace, L., Scacchi, A., & Assanto, G. (2011). Noise characterization of Ge/Si photodetectors. In 8th IEEE International Conference on Group IV Photonics, GFP 2011 (pp. 290-292). [6053793] https://doi.org/10.1109/GROUP4.2011.6053793

Vancouver

Colace L, Scacchi A, Assanto G. Noise characterization of Ge/Si photodetectors. In 8th IEEE International Conference on Group IV Photonics, GFP 2011. 2011. p. 290-292. 6053793 https://doi.org/10.1109/GROUP4.2011.6053793

Author

Colace, Lorenzo ; Scacchi, Andrea ; Assanto, Gaetano. / Noise characterization of Ge/Si photodetectors. 8th IEEE International Conference on Group IV Photonics, GFP 2011. 2011. pp. 290-292

Bibtex - Download

@inproceedings{14aeae163a8541e5b1dc21fcc834158a,
title = "Noise characterization of Ge/Si photodetectors",
abstract = "We invesyigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.",
keywords = "Ge/Si photodetectors, near infrared, noise",
author = "Lorenzo Colace and Andrea Scacchi and Gaetano Assanto",
year = "2011",
doi = "10.1109/GROUP4.2011.6053793",
language = "English",
isbn = "9781424483389",
pages = "290--292",
booktitle = "8th IEEE International Conference on Group IV Photonics, GFP 2011",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - Noise characterization of Ge/Si photodetectors

AU - Colace, Lorenzo

AU - Scacchi, Andrea

AU - Assanto, Gaetano

PY - 2011

Y1 - 2011

N2 - We invesyigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.

AB - We invesyigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.

KW - Ge/Si photodetectors

KW - near infrared

KW - noise

UR - http://www.scopus.com/inward/record.url?scp=81355136186&partnerID=8YFLogxK

U2 - 10.1109/GROUP4.2011.6053793

DO - 10.1109/GROUP4.2011.6053793

M3 - Conference contribution

SN - 9781424483389

SP - 290

EP - 292

BT - 8th IEEE International Conference on Group IV Photonics, GFP 2011

ER -