Tampere University of Technology

TUTCRIS Research Portal

Numerical simulation of temperature distributions in layered structures during laser processing

Research output: Contribution to journalArticleScientificpeer-review


Original languageEnglish
Pages (from-to)12-22
Number of pages11
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 1989
Externally publishedYes
Publication typeA1 Journal article-refereed


A numerical simulation approach for the evaluation of temperature distribution in layer structured substrates during laser processing is introduced. The explicit finite-difference solution of the heat equation is used and the full non-linearity of the heat diffusion is taken into account by temperature dependent substrate parameters. The heat equations for layered structures are solved using both rectangular and cylindrical coordinate systems. The method is applied to CW Ar+ laser-induced temperature distributions in some commonly used layer structures in microelectronics, such as silicon on sapphire (SOS) and SiO2 coated silicon. Results are compared with experiments.