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On Moderate Inversion/Saturation Regions As Approximations to "Reconciliation" Model

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Vancouver, May 15-18, 2016
PublisherIEEE
ISBN (Electronic)978-1-4673-8721-7
DOIs
Publication statusPublished - 15 May 2016
Publication typeA4 Article in a conference publication
EventCANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING -
Duration: 1 Jan 1900 → …

Publication series

Name
ISSN (Electronic)0840-7789

Conference

ConferenceCANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING
Period1/01/00 → …

Abstract

The paper proposes analytical definitions of moderate inversion and moderate saturation. These definitions are introduced considering two different series expansions for the function ln2(x). The expansions are “matched”: the upper limit for convergence of the first series and the lower limit for convergence of the second series define the border and transition from weak to moderate inversion/saturation. The moderate inversion/saturation corresponds to approximation of the function ln2(x) by a modified sum of two first terms of the second series. Then, the condition of inversion/saturation is defined by dominance of one term with respect to another. The condition of moderate inversion/saturation is a necessary step in transition from weak to strong inversion/saturation. The introduced definitions correspond to MOS transistor operation physics and eliminate discontinuity in this transition.

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