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Optical power monitors in Ge monolithically integrated on SOI chips

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)514-517
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number4
DOIs
Publication statusPublished - Apr 2011
Publication typeA1 Journal article-refereed

Abstract

We report on the fabrication and operation of optical power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide pn heterojunction photodiodes in evaporated germanium. The low temperature growth of Ge is compatible with silicon waveguide technology. The photodetectors exhibit typical responsivities of 10-30 mA/W; the power monitors are used with front-end trans-impedance amplifiers based on commercially available operational amplifiers and can operate with optical signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 μW, respectively.

Keywords

  • Germanium, Integrated optoelectronics, Photodetectors, Powermonitor, Silicon-on-insulator