Optical power monitors in Ge monolithically integrated on SOI chips
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 514-517 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 88 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2011 |
| Publication type | A1 Journal article-refereed |
Abstract
We report on the fabrication and operation of optical power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide pn heterojunction photodiodes in evaporated germanium. The low temperature growth of Ge is compatible with silicon waveguide technology. The photodetectors exhibit typical responsivities of 10-30 mA/W; the power monitors are used with front-end trans-impedance amplifiers based on commercially available operational amplifiers and can operate with optical signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 μW, respectively.
ASJC Scopus subject areas
Keywords
- Germanium, Integrated optoelectronics, Photodetectors, Powermonitor, Silicon-on-insulator