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Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)122-125
Number of pages4
JournalScripta Materialia
Volume108
Early online date19 Jun 2015
DOIs
Publication statusPublished - 2015
Publication typeA1 Journal article-refereed

Abstract

The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to longer wavelengths. GaNAs and GaInNAs quantum wells contribute also to extending the absorption edge. In addition, the use of GaNAs and GaInNAs layers enhances the thermal escape of electrons from QDs by introducing steps for electrons to the GaAs conduction band.

Keywords

  • Quantum dot, Quantum well, Solar cell, Strain engineering, Thermal escape

Publication forum classification

Field of science, Statistics Finland