Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 1943-1949 |
| Journal | IEEE journal of quantum electronics |
| Volume | 29 |
| Publication status | Published - 1993 |
| Publication type | A1 Journal article-refereed |