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Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE

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Details

Original languageEnglish
Pages (from-to)1943-1949
JournalIEEE journal of quantum electronics
Volume29
Publication statusPublished - 1993
Publication typeA1 Journal article-refereed

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