Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 1943-1949 |
Journal | IEEE journal of quantum electronics |
Volume | 29 |
Publication status | Published - 1993 |
Publication type | A1 Journal article-refereed |