Origin of improved luminescence efficiency after annealing of Ga (In) NAs materials grown by molecular-beam epitaxy
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 1094-1096 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 8 |
Publication status | Published - 2001 |
Publication type | A1 Journal article-refereed |