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Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
PublisherEDP Sciences
DOIs
Publication statusPublished - 2017
Publication typeA4 Article in a conference publication
EventEuropean Space Power Conference -
Duration: 1 Jan 2000 → …

Publication series

NameE3S Web of Conferences
Volume16
ISSN (Electronic)2267-1242

Conference

ConferenceEuropean Space Power Conference
Period1/01/00 → …

Abstract

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

Publication forum classification

Field of science, Statistics Finland

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