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Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

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@article{e15583d391064881bc6b1d1556d78ce6,
title = "Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs",
abstract = "We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, i.e. in the range of 5–8{\%}, and bandgap energies close to 0.7 eV grown by molecular beam epitaxy. A good crystalline quality is demonstrated for the entire range of N concentrations. An average external quantum efficiency of 0.45 is demonstrated for GaInNAsSb solar cell with 6.2{\%} N exhibiting a bandgap of 0.78 eV (no antireflection coatings has been applied). The internal quantum efficiency for the cell is 0.65 at E g + 0.2 eV. The solar cells exhibited bandgap-voltage offsets between 0.55 V (for N = 5.3{\%}) and 0.66 V (for N = 7.9{\%}). When used in a six-junction solar cell architecture under AM1.5D illumination, the estimated short-circuit current density corresponding to the 0.78 eV cell is 8.2 mA/cm 2 . Furthermore, using the parameters obtained for the GaInNAsSb junction with 6.2{\%} N, we have estimated that such six-junction solar cell architecture could realistically attain an efficiency of over 50{\%} at 1000 suns concentration.",
keywords = "Dilute nitrides, GaInNAsSb, Molecular beam epitaxy, Multijunction solar cells",
author = "Riku Isoaho and Arto Aho and Antti Tukiainen and Timo Aho and Marianna Raappana and Turkka Salminen and Jarno Reuna and Mircea Guina",
year = "2019",
month = "6",
day = "15",
doi = "10.1016/j.solmat.2019.02.030",
language = "English",
volume = "195",
pages = "198--203",
journal = "Solar materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

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TY - JOUR

T1 - Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

AU - Isoaho, Riku

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Aho, Timo

AU - Raappana, Marianna

AU - Salminen, Turkka

AU - Reuna, Jarno

AU - Guina, Mircea

PY - 2019/6/15

Y1 - 2019/6/15

N2 - We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, i.e. in the range of 5–8%, and bandgap energies close to 0.7 eV grown by molecular beam epitaxy. A good crystalline quality is demonstrated for the entire range of N concentrations. An average external quantum efficiency of 0.45 is demonstrated for GaInNAsSb solar cell with 6.2% N exhibiting a bandgap of 0.78 eV (no antireflection coatings has been applied). The internal quantum efficiency for the cell is 0.65 at E g + 0.2 eV. The solar cells exhibited bandgap-voltage offsets between 0.55 V (for N = 5.3%) and 0.66 V (for N = 7.9%). When used in a six-junction solar cell architecture under AM1.5D illumination, the estimated short-circuit current density corresponding to the 0.78 eV cell is 8.2 mA/cm 2 . Furthermore, using the parameters obtained for the GaInNAsSb junction with 6.2% N, we have estimated that such six-junction solar cell architecture could realistically attain an efficiency of over 50% at 1000 suns concentration.

AB - We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, i.e. in the range of 5–8%, and bandgap energies close to 0.7 eV grown by molecular beam epitaxy. A good crystalline quality is demonstrated for the entire range of N concentrations. An average external quantum efficiency of 0.45 is demonstrated for GaInNAsSb solar cell with 6.2% N exhibiting a bandgap of 0.78 eV (no antireflection coatings has been applied). The internal quantum efficiency for the cell is 0.65 at E g + 0.2 eV. The solar cells exhibited bandgap-voltage offsets between 0.55 V (for N = 5.3%) and 0.66 V (for N = 7.9%). When used in a six-junction solar cell architecture under AM1.5D illumination, the estimated short-circuit current density corresponding to the 0.78 eV cell is 8.2 mA/cm 2 . Furthermore, using the parameters obtained for the GaInNAsSb junction with 6.2% N, we have estimated that such six-junction solar cell architecture could realistically attain an efficiency of over 50% at 1000 suns concentration.

KW - Dilute nitrides

KW - GaInNAsSb

KW - Molecular beam epitaxy

KW - Multijunction solar cells

UR - http://www.scopus.com/inward/record.url?scp=85062810786&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2019.02.030

DO - 10.1016/j.solmat.2019.02.030

M3 - Article

VL - 195

SP - 198

EP - 203

JO - Solar materials and Solar Cells

JF - Solar materials and Solar Cells

SN - 0927-0248

ER -