Polarization resolved photoluminescence in GaAs1−xBix/GaAs quantum wells
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||4|
|Journal||Journal of Luminescence|
|Early online date||13 Oct 2016|
|Publication status||Published - Feb 2017|
|Publication type||A1 Journal article-refereed|
We have investigated polarization resolved photoluminescence (PL) of GaAs1−xBix/GaAs quantum wells (QWs) with different Bi concentrations in the dilute range (x1−xBix/GaAs QWs increase with the increase of Bi concentration. Excitonic gex-factors of 4 and 10 were obtained at 15 T for as-grown GaAs1−xBix/GaAs QWs with 1.2% and 1.9% Bi concentration, respectively. These values evidence an important increase of electron and hole g-factors with the introduction of Bi in GaAs.