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Polarization resolved photoluminescence in GaAs1−xBix/GaAs quantum wells

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Details

Original languageEnglish
Pages (from-to)49-52
Number of pages4
JournalJournal of Luminescence
Volume182
Early online date13 Oct 2016
DOIs
Publication statusPublished - Feb 2017
Publication typeA1 Journal article-refereed

Abstract

We have investigated polarization resolved photoluminescence (PL) of GaAs1−xBix/GaAs quantum wells (QWs) with different Bi concentrations in the dilute range (x1−xBix/GaAs QWs increase with the increase of Bi concentration. Excitonic gex-factors of 4 and 10 were obtained at 15 T for as-grown GaAs1−xBix/GaAs QWs with 1.2% and 1.9% Bi concentration, respectively. These values evidence an important increase of electron and hole g-factors with the introduction of Bi in GaAs.