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Quantum-Well Laser Emitting at 1.2 µm-1.3 µm Window Monolithically Integrated on Ge Substrate

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
Publication statusPublished - 2017
Eventecoc 2017: European Conference on Optical Communication - Gothenburg, Sweden
Duration: 17 Sep 201721 Sep 2017
Conference number: 43

Conference

Conferenceecoc 2017
CountrySweden
CityGothenburg
Period17/09/1721/09/17

Abstract

We report a quantum-well laser diode monolithically integrated
on Ge substrate. The gain is provided by two GaInNAsSb/GaAs
quantum-wells with emission at 1200 nm-1300 nm. The diode
exhibits continuous-wave operation with mW-level output
power at room temperature.

Keywords

  • III-V/Ge, photonics integration, GaInNAs, laser diode

Field of science, Statistics Finland