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Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication43rd European Conference on Optical Communication, ECOC 2017
PublisherIEEE
Pages1-3
Number of pages3
ISBN (Electronic)9781538656242
DOIs
Publication statusPublished - 24 Apr 2018
Publication typeA4 Article in a conference publication
EventEuropean Conference on Optical Communication -
Duration: 1 Jan 1900 → …

Conference

ConferenceEuropean Conference on Optical Communication
Period1/01/00 → …

Abstract

We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 μm-1.3 μm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

Publication forum classification

Field of science, Statistics Finland