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Rapid, Brushless Self-assembly of a PS-b-PDMS Block Copolymer for Nanolithography

Research output: Contribution to journalArticleScientificpeer-review


Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalColloids and Interface Science Communications
Publication statusPublished - 1 Oct 2014
Publication typeA1 Journal article-refereed


Block copolymers (BCP) are highly promising self-assembling precursors for scalable nanolithography. Very regular BCP nanopatterns can be used as on-chip etch masks. The first step in the processing of BCP thin films is usually the chemical modification of the substrate surface, typically by grafting of a brush layer that renders the surface energy neutral relative to the constituent blocks. We provide here a first study on rapid, low temperature self-assembly of PS-. b-PDMS (polystyrene-. block-polydimethylsiloxane) on silicon substrates without a brush layer. We show that it forms line and antidot patterns after short solvo-thermal annealing. Unlike previous reports on this system, low temperature and short annealing time provide self-assembly in homogeneous thin films covering large substrate areas. This on-chip mask was then used for pattern transfer to the underlying silicon substrate. SEM (scanning electron microscope) images reveal silicon nanowires relative to the PDMS patterns of the BCP mask.


  • Aspect ratio, Brushless, Dry etching, Lines and antidots, Pattern transfer, PS-b-PDMS, Self-assembly, Silicon nanostructures, Soft mask template, Solvo-thermal annealing