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Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationProceedings of SPIE vol. 8966, 2014.
EditorsM Guina
Place of PublicationBELLINGHAM
PublisherSPIE
Number of pages7
DOIs
Publication statusPublished - 2015
Publication typeA4 Article in a conference publication
EventVertical External Cavity Surface Emitting Lasers - , United Kingdom
Duration: 1 Jan 2015 → …

Publication series

NameProceedings of SPIE
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume9349
ISSN (Print)0277-786X

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
CountryUnited Kingdom
Period1/01/15 → …

Abstract

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.

Keywords

  • Wafer-fused vertical-external-cavity surface-emitting lasers (VECSELs), wafer-fused gain mirrors, optically pumped VECSELs, photonics technology, SEMICONDUCTOR DISK LASER

Publication forum classification

Field of science, Statistics Finland