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Reduction of surface defects in GaAs grown by MBE

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Reduction of surface defects in GaAs grown by MBE. / Salokatve, A.; Varrio, J.; Lammasniemi, J.; Asonen, H.; Pessa, M.

In: Applied Physics Letters, Vol. 51, No. 17, 1987, p. 1340-1342.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Salokatve, A, Varrio, J, Lammasniemi, J, Asonen, H & Pessa, M 1987, 'Reduction of surface defects in GaAs grown by MBE', Applied Physics Letters, vol. 51, no. 17, pp. 1340-1342.

APA

Salokatve, A., Varrio, J., Lammasniemi, J., Asonen, H., & Pessa, M. (1987). Reduction of surface defects in GaAs grown by MBE. Applied Physics Letters, 51(17), 1340-1342.

Vancouver

Salokatve A, Varrio J, Lammasniemi J, Asonen H, Pessa M. Reduction of surface defects in GaAs grown by MBE. Applied Physics Letters. 1987;51(17):1340-1342.

Author

Salokatve, A. ; Varrio, J. ; Lammasniemi, J. ; Asonen, H. ; Pessa, M. / Reduction of surface defects in GaAs grown by MBE. In: Applied Physics Letters. 1987 ; Vol. 51, No. 17. pp. 1340-1342.

Bibtex - Download

@article{6322b51a1a8b427080a797838ea5d217,
title = "Reduction of surface defects in GaAs grown by MBE",
author = "A. Salokatve and J. Varrio and J. Lammasniemi and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1987",
language = "English",
volume = "51",
pages = "1340--1342",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "17",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Reduction of surface defects in GaAs grown by MBE

AU - Salokatve, A.

AU - Varrio, J.

AU - Lammasniemi, J.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1987

Y1 - 1987

M3 - Article

VL - 51

SP - 1340

EP - 1342

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -