Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 209-212 |
| Journal | Journal of Crystal Growth |
| Volume | 127 |
| Publication status | Published - 1993 |
| Publication type | A1 Journal article-refereed |