Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 209-212 |
Journal | Journal of Crystal Growth |
Volume | 127 |
Publication status | Published - 1993 |
Publication type | A1 Journal article-refereed |