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SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

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SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations. / Xia, Z.; Ristolainen, E. O.; Holloway, P.

In: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena, Vol. 16, No. 5, 1998, p. 2629-2632.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Xia, Z, Ristolainen, EO & Holloway, P 1998, 'SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations', Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena, vol. 16, no. 5, pp. 2629-2632.

APA

Xia, Z., Ristolainen, E. O., & Holloway, P. (1998). SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations. Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena, 16(5), 2629-2632.

Vancouver

Xia Z, Ristolainen EO, Holloway P. SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations. Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena. 1998;16(5):2629-2632.

Author

Xia, Z. ; Ristolainen, E. O. ; Holloway, P. / SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations. In: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena. 1998 ; Vol. 16, No. 5. pp. 2629-2632.

Bibtex - Download

@article{0f63dc812d9a4e199f5467707aa3bd5d,
title = "SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations",
author = "Z. Xia and Ristolainen, {E. O.} and P. Holloway",
note = "Contribution: organisation=ele,FACT1=1",
year = "1998",
language = "English",
volume = "16",
pages = "2629--2632",
journal = "Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena",
number = "5",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

AU - Xia, Z.

AU - Ristolainen, E. O.

AU - Holloway, P.

N1 - Contribution: organisation=ele,FACT1=1

PY - 1998

Y1 - 1998

M3 - Article

VL - 16

SP - 2629

EP - 2632

JO - Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena

JF - Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, Processing, Measurement, and Phenomena

IS - 5

ER -