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Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 -
Duration: 14 Oct 200316 Oct 2003

Conference

ConferenceIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003
Period14/10/0316/10/03

Abstract

A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.