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Site-Controlled Epitaxy of InAs Quantum Dots on Nanoimprint Lithography Patterns

Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

Details

Original languageEnglish
Title of host publicationMolecular Beam Epitaxy
Subtitle of host publication From Research to Mass Production
EditorsMohamed Henini
PublisherElsevier
Chapter12
Pages277-292
Edition2nd
ISBN (Electronic) 9780128121375
ISBN (Print)9780128121368
DOIs
Publication statusPublished - 28 Jun 2018
Publication typeA3 Part of a book or another research book

Abstract

The basic principle of site-controlled epitaxy is to use a nanopattern or other surface feature to guide the inherently disordered nucleation of quantum dots (QD) in predetermined locations. The ability to position high-quality epitaxial QDs deterministically is extremely important for the integration of quantum emitters in photonic structures, such as microcavities for emerging quantum photonic application. Achieving highly ordered QD arrays requires precise control of growth parameters, in particular growth temperature, which define adatom diffusion and desorption on the patterned surface. Besides controlling the nucleation site, the nanopatterned surface affects the size, shape, and chemical composition of the QDs, thus allowing tuning of the QD properties by pattern design. In this chapter, we review the fundamental concepts of epitaxial growth and present a detailed description of the growth and patterning techniques for different QD architectures forming the framework of site-controlled epitaxy of InAs QDs on nanoimprint lithography patterned GaAs. From an application perspective, we discuss integration of site-controlled QDs in photonic and plasmonic structures.

Publication forum classification

Field of science, Statistics Finland