Site-Controlled Epitaxy of InAs Quantum Dots on Nanoimprint Lithography Patterns
Research output: Chapter in Book/Report/Conference proceeding › Chapter › Scientific › peer-review
The basic principle of site-controlled epitaxy is to use a nanopattern or other surface feature to guide the inherently disordered nucleation of quantum dots (QD) in predetermined locations. The ability to position high-quality epitaxial QDs deterministically is extremely important for the integration of quantum emitters in photonic structures, such as microcavities for emerging quantum photonic application. Achieving highly ordered QD arrays requires precise control of growth parameters, in particular growth temperature, which define adatom diffusion and desorption on the patterned surface. Besides controlling the nucleation site, the nanopatterned surface affects the size, shape, and chemical composition of the QDs, thus allowing tuning of the QD properties by pattern design. In this chapter, we review the fundamental concepts of epitaxial growth and present a detailed description of the growth and patterning techniques for different QD architectures forming the framework of site-controlled epitaxy of InAs QDs on nanoimprint lithography patterned GaAs. From an application perspective, we discuss integration of site-controlled QDs in photonic and plasmonic structures.