Spectral characteristics of narrow-linewidth high-power 1180 nm DBR laser with surface gratings
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 114-117 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 29 |
Issue number | 1 |
Early online date | 16 Nov 2016 |
DOIs | |
Publication status | Published - Jan 2017 |
Publication type | A1 Journal article-refereed |
Abstract
We report narrow-linewidth 1180 nm GaInNAs/ GaAs distributed Bragg reflector lasers reaching up to 500 mW continuous-wave output power at room temperature. The lasers employ surface gratings, which avoided the problematic regrowth and enabled a high side-mode suppression ratio over a relatively large mode-hop-free tuning range. Wavelength tuning rates of 0.1 nm/C and 1 pm/mA were obtained by changing the mount temperature and the drive current, respectively. The lasers exhibit a narrow emission linewidth (<250 kHz) even at high output power levels. The side-mode suppression ratio is relatively independent of the power level and remains higher than 50 dB even in the vicinity of the roll-off point. An outstanding temperature stability is provided by good carrier confinement in the GaInNAs/GaAs quantum well. A 2000 hour burn-in with constant 1.5 A bias at 20 C improved the output characteristics slightly and did not reveal any failure among the tested components.
Keywords
- Distributed Bragg reflectors, Etching, Gratings, Laser modes, Power generation, Surface emitting lasers, Temperature measurement, distributed Bragg reflector laser, frequency doubling, high power, narrow linewidth