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Spectral characteristics of narrow-linewidth high-power 1180 nm DBR laser with surface gratings

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Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number1
Early online date16 Nov 2016
Publication statusPublished - Jan 2017
Publication typeA1 Journal article-refereed


We report narrow-linewidth 1180 nm GaInNAs/ GaAs distributed Bragg reflector lasers reaching up to 500 mW continuous-wave output power at room temperature. The lasers employ surface gratings, which avoided the problematic regrowth and enabled a high side-mode suppression ratio over a relatively large mode-hop-free tuning range. Wavelength tuning rates of 0.1 nm/C and 1 pm/mA were obtained by changing the mount temperature and the drive current, respectively. The lasers exhibit a narrow emission linewidth (<250 kHz) even at high output power levels. The side-mode suppression ratio is relatively independent of the power level and remains higher than 50 dB even in the vicinity of the roll-off point. An outstanding temperature stability is provided by good carrier confinement in the GaInNAs/GaAs quantum well. A 2000 hour burn-in with constant 1.5 A bias at 20 C improved the output characteristics slightly and did not reveal any failure among the tested components.


  • Distributed Bragg reflectors, Etching, Gratings, Laser modes, Power generation, Surface emitting lasers, Temperature measurement, distributed Bragg reflector laser, frequency doubling, high power, narrow linewidth

Publication forum classification

Field of science, Statistics Finland