Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy
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Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy. / Zhang, G.; Ovtchinnikov, A.
In: Applied Physics Letters, Vol. 62, 1993, p. 1644-1646.Research output: Contribution to journal › Article › Scientific › peer-review
Harvard
Zhang, G & Ovtchinnikov, A 1993, 'Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy', Applied Physics Letters, vol. 62, pp. 1644-1646.
APA
Zhang, G., & Ovtchinnikov, A. (1993). Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy. Applied Physics Letters, 62, 1644-1646.
Vancouver
Zhang G, Ovtchinnikov A. Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy. Applied Physics Letters. 1993;62:1644-1646.
Author
Bibtex - Download
@article{d0587ef798884ad4ac49e3b7c722c566,
title = "Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy",
author = "G. Zhang and A. Ovtchinnikov",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "62",
pages = "1644--1646",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy
AU - Zhang, G.
AU - Ovtchinnikov, A.
N1 - Contribution: organisation=fys,FACT1=1
PY - 1993
Y1 - 1993
M3 - Article
VL - 62
SP - 1644
EP - 1646
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
ER -