Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 1405-1407 |
Journal | Applied Physics Letters |
Volume | 62 |
Publication status | Published - 1993 |
Publication type | A1 Journal article-refereed |