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Strength of Ta-Si interfaces by molecular dynamics

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Strength of Ta-Si interfaces by molecular dynamics. / Heino, P.; Ristolainen, E.

In: Microelectronics Reliability, No. 43, 2003, p. 645-650.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Heino, P & Ristolainen, E 2003, 'Strength of Ta-Si interfaces by molecular dynamics', Microelectronics Reliability, no. 43, pp. 645-650.

APA

Heino, P., & Ristolainen, E. (2003). Strength of Ta-Si interfaces by molecular dynamics. Microelectronics Reliability, (43), 645-650.

Vancouver

Heino P, Ristolainen E. Strength of Ta-Si interfaces by molecular dynamics. Microelectronics Reliability. 2003;(43):645-650.

Author

Heino, P. ; Ristolainen, E. / Strength of Ta-Si interfaces by molecular dynamics. In: Microelectronics Reliability. 2003 ; No. 43. pp. 645-650.

Bibtex - Download

@article{d7233416de324182ac36c5e34a199dc9,
title = "Strength of Ta-Si interfaces by molecular dynamics",
author = "P. Heino and E. Ristolainen",
note = "Contribution: organisation=ele,FACT1=1",
year = "2003",
language = "English",
pages = "645--650",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier",
number = "43",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Strength of Ta-Si interfaces by molecular dynamics

AU - Heino, P.

AU - Ristolainen, E.

N1 - Contribution: organisation=ele,FACT1=1

PY - 2003

Y1 - 2003

M3 - Article

SP - 645

EP - 650

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 43

ER -