Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

Research output: Book/Report › Doctoral thesis › Collection of Articles

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Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures. / Pakarinen, Janne.

Tampere University of Technology, 2009. 46 p. (Tampere University of Technology. Publication; Vol. 830).

Research output: Book/Report › Doctoral thesis › Collection of Articles

Harvard

Pakarinen, J 2009, Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures. Tampere University of Technology. Publication, vol. 830, Tampere University of Technology.

APA

Pakarinen, J. (2009). Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures. (Tampere University of Technology. Publication; Vol. 830). Tampere University of Technology.

Vancouver

Pakarinen J. Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures. Tampere University of Technology, 2009. 46 p. (Tampere University of Technology. Publication).

Author

Pakarinen, Janne. / Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures. Tampere University of Technology, 2009. 46 p. (Tampere University of Technology. Publication).

Bibtex - Download

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title = "Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures",

abstract = "In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.",

author = "Janne Pakarinen",

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year = "2009",

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language = "English",

isbn = "978-952-15-2219-2",

series = "Tampere University of Technology. Publication",

publisher = "Tampere University of Technology",

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RIS (suitable for import to EndNote) - Download

TY - BOOK

T1 - Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

AU - Pakarinen, Janne

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N2 - In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

AB - In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

M3 - Doctoral thesis

SN - 978-952-15-2219-2

T3 - Tampere University of Technology. Publication

BT - Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

PB - Tampere University of Technology

ER -

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