Tampere University of Technology

TUTCRIS Research Portal

Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers

Research output: Contribution to journalArticleScientificpeer-review

Standard

Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers. / Zhang, G.; Ovtchinnikov, A.; Pessa, M.

In: Applied Physics Letters, Vol. 62, 1993, p. 967-969.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Ovtchinnikov, A & Pessa, M 1993, 'Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers', Applied Physics Letters, vol. 62, pp. 967-969.

APA

Zhang, G., Ovtchinnikov, A., & Pessa, M. (1993). Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers. Applied Physics Letters, 62, 967-969.

Vancouver

Zhang G, Ovtchinnikov A, Pessa M. Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers. Applied Physics Letters. 1993;62:967-969.

Author

Zhang, G. ; Ovtchinnikov, A. ; Pessa, M. / Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers. In: Applied Physics Letters. 1993 ; Vol. 62. pp. 967-969.

Bibtex - Download

@article{4fb4d1d3647e483c9a434374d514c6ed,
title = "Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers",
author = "G. Zhang and A. Ovtchinnikov and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "62",
pages = "967--969",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers

AU - Zhang, G.

AU - Ovtchinnikov, A.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

VL - 62

SP - 967

EP - 969

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -