Surface relaxation of the (110) face of rutile SnO2
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 103-109 |
| Number of pages | 7 |
| Journal | Surcface Science |
| Volume | 420 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 11 Jan 1999 |
| Externally published | Yes |
| Publication type | A1 Journal article-refereed |
Abstract
Surface relaxation of the stoichiometric and reduced SnO2 (110) surfaces is studied with first-principles calculations. Calculations are carried out with two different self-consistent ab initio LDA methods, which lead to similar results. The most prominent feature in the relaxation is that the surface layer oxygens of the reduced surface move outwards about 0.4Å with respect to the surface tin atoms. The stoichiometric (oxidized) surface is stabilized by the "bridging" oxygen atoms, and therefore, relaxes less. The valence band density-of-states is similar at both surfaces, except that removing bridging oxygens leaves behind electrons that occupy gap states formed at the reduced tin atoms.
ASJC Scopus subject areas
Keywords
- Density functional calculations, Semiconducting surfaces, Single crystal surfaces, Surface relaxation and reconstruction, Tin oxides