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Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)

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Details

Original languageEnglish
Pages (from-to)3599-3602
JournalJournal of Applied Physics
Volume73
Publication statusPublished - 1993
Publication typeA1 Journal article-refereed

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