Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 3599-3602 |
| Journal | Journal of Applied Physics |
| Volume | 73 |
| Publication status | Published - 1993 |
| Publication type | A1 Journal article-refereed |