Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (lambda ~ 980 nm)
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 3599-3602 |
Journal | Journal of Applied Physics |
Volume | 73 |
Publication status | Published - 1993 |
Publication type | A1 Journal article-refereed |