The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy
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The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. / Salokatve, A.; Hovinen, M.
In: Journal of Applied Physics, Vol. 67, No. 7, 1990, p. 3378-3381.Research output: Contribution to journal › Article › Scientific › peer-review
Harvard
Salokatve, A & Hovinen, M 1990, 'The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy', Journal of Applied Physics, vol. 67, no. 7, pp. 3378-3381.
APA
Salokatve, A., & Hovinen, M. (1990). The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. Journal of Applied Physics, 67(7), 3378-3381.
Vancouver
Salokatve A, Hovinen M. The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. Journal of Applied Physics. 1990;67(7):3378-3381.
Author
Bibtex - Download
@article{7e403fcd762e46a19276759c712a1def,
title = "The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy",
author = "A. Salokatve and M. Hovinen",
note = "Contribution: organisation=fys,FACT1=1",
year = "1990",
language = "English",
volume = "67",
pages = "3378--3381",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "7",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy
AU - Salokatve, A.
AU - Hovinen, M.
N1 - Contribution: organisation=fys,FACT1=1
PY - 1990
Y1 - 1990
M3 - Article
VL - 67
SP - 3378
EP - 3381
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -