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The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

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The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. / Salokatve, A.; Hovinen, M.

In: Journal of Applied Physics, Vol. 67, No. 7, 1990, p. 3378-3381.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Salokatve, A & Hovinen, M 1990, 'The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy', Journal of Applied Physics, vol. 67, no. 7, pp. 3378-3381.

APA

Salokatve, A., & Hovinen, M. (1990). The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. Journal of Applied Physics, 67(7), 3378-3381.

Vancouver

Salokatve A, Hovinen M. The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. Journal of Applied Physics. 1990;67(7):3378-3381.

Author

Salokatve, A. ; Hovinen, M. / The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy. In: Journal of Applied Physics. 1990 ; Vol. 67, No. 7. pp. 3378-3381.

Bibtex - Download

@article{7e403fcd762e46a19276759c712a1def,
title = "The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy",
author = "A. Salokatve and M. Hovinen",
note = "Contribution: organisation=fys,FACT1=1",
year = "1990",
language = "English",
volume = "67",
pages = "3378--3381",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "7",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

AU - Salokatve, A.

AU - Hovinen, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1990

Y1 - 1990

M3 - Article

VL - 67

SP - 3378

EP - 3381

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -