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Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterization

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Details

Original languageEnglish
Pages (from-to)526-529
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number4
DOIs
Publication statusPublished - Apr 2011
Publication typeA1 Journal article-refereed

Abstract

Using a low-temperature process, we thermally evaporated Ge thin films on Si substrates and investigated both structural and electrical properties of samples grown at various temperatures. The characterization included X-ray diffraction, atomic force microscopy and Hall measurements and aimed at determining a suitable temperature range in terms of crystal quality and transport properties. Finally, we employed Ge films on Si to fabricate near infrared photodiodes and test them in terms of dark current and responsivity.