Thermally evaporated single-crystal Germanium on Silicon
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 8037-8040 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1 Sep 2011 |
| Publication type | A1 Journal article-refereed |
Abstract
Using conventional and polarization-dependent Raman spectroscopy we investigate the structural properties of Germanium films thermally evaporated on Silicon under various conditions. The analysis suggests that the Ge films can be crystalline, amorphous and poly-oriented, depending on the substrate temperature. We use both comparison with Raman spectra of Ge films grown on amorphous substrates and polarization-dependent Raman measurements to demonstrate that in the 250-450 °C interval, crystalline Ge films are epitaxial. This result is validated by means of large angle X-ray diffraction measurements. We employ these films to fabricate and characterize near infrared heterojunction photodiodes that exhibit high responsivities and low dark current densities.
ASJC Scopus subject areas
Keywords
- Germanium, Near infrared, Photodetectors, Raman characterization, Thermal evaporation