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Thermally evaporated single-crystal Germanium on Silicon

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Thermally evaporated single-crystal Germanium on Silicon. / Sorianello, V.; Colace, L.; Nardone, M.; Assanto, G.

In: Thin Solid Films, Vol. 519, No. 22, 01.09.2011, p. 8037-8040.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Sorianello, V, Colace, L, Nardone, M & Assanto, G 2011, 'Thermally evaporated single-crystal Germanium on Silicon', Thin Solid Films, vol. 519, no. 22, pp. 8037-8040. https://doi.org/10.1016/j.tsf.2011.06.023

APA

Sorianello, V., Colace, L., Nardone, M., & Assanto, G. (2011). Thermally evaporated single-crystal Germanium on Silicon. Thin Solid Films, 519(22), 8037-8040. https://doi.org/10.1016/j.tsf.2011.06.023

Vancouver

Sorianello V, Colace L, Nardone M, Assanto G. Thermally evaporated single-crystal Germanium on Silicon. Thin Solid Films. 2011 Sep 1;519(22):8037-8040. https://doi.org/10.1016/j.tsf.2011.06.023

Author

Sorianello, V. ; Colace, L. ; Nardone, M. ; Assanto, G. / Thermally evaporated single-crystal Germanium on Silicon. In: Thin Solid Films. 2011 ; Vol. 519, No. 22. pp. 8037-8040.

Bibtex - Download

@article{fe9fa299bb2945119c570ab7edf1584b,
title = "Thermally evaporated single-crystal Germanium on Silicon",
abstract = "Using conventional and polarization-dependent Raman spectroscopy we investigate the structural properties of Germanium films thermally evaporated on Silicon under various conditions. The analysis suggests that the Ge films can be crystalline, amorphous and poly-oriented, depending on the substrate temperature. We use both comparison with Raman spectra of Ge films grown on amorphous substrates and polarization-dependent Raman measurements to demonstrate that in the 250-450 °C interval, crystalline Ge films are epitaxial. This result is validated by means of large angle X-ray diffraction measurements. We employ these films to fabricate and characterize near infrared heterojunction photodiodes that exhibit high responsivities and low dark current densities.",
keywords = "Germanium, Near infrared, Photodetectors, Raman characterization, Thermal evaporation",
author = "V. Sorianello and L. Colace and M. Nardone and G. Assanto",
year = "2011",
month = "9",
day = "1",
doi = "10.1016/j.tsf.2011.06.023",
language = "English",
volume = "519",
pages = "8037--8040",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "22",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Thermally evaporated single-crystal Germanium on Silicon

AU - Sorianello, V.

AU - Colace, L.

AU - Nardone, M.

AU - Assanto, G.

PY - 2011/9/1

Y1 - 2011/9/1

N2 - Using conventional and polarization-dependent Raman spectroscopy we investigate the structural properties of Germanium films thermally evaporated on Silicon under various conditions. The analysis suggests that the Ge films can be crystalline, amorphous and poly-oriented, depending on the substrate temperature. We use both comparison with Raman spectra of Ge films grown on amorphous substrates and polarization-dependent Raman measurements to demonstrate that in the 250-450 °C interval, crystalline Ge films are epitaxial. This result is validated by means of large angle X-ray diffraction measurements. We employ these films to fabricate and characterize near infrared heterojunction photodiodes that exhibit high responsivities and low dark current densities.

AB - Using conventional and polarization-dependent Raman spectroscopy we investigate the structural properties of Germanium films thermally evaporated on Silicon under various conditions. The analysis suggests that the Ge films can be crystalline, amorphous and poly-oriented, depending on the substrate temperature. We use both comparison with Raman spectra of Ge films grown on amorphous substrates and polarization-dependent Raman measurements to demonstrate that in the 250-450 °C interval, crystalline Ge films are epitaxial. This result is validated by means of large angle X-ray diffraction measurements. We employ these films to fabricate and characterize near infrared heterojunction photodiodes that exhibit high responsivities and low dark current densities.

KW - Germanium

KW - Near infrared

KW - Photodetectors

KW - Raman characterization

KW - Thermal evaporation

UR - http://www.scopus.com/inward/record.url?scp=80052110605&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.06.023

DO - 10.1016/j.tsf.2011.06.023

M3 - Article

VL - 519

SP - 8037

EP - 8040

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 22

ER -