Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells
Research output: Contribution to journal › Article › Scientific › peer-review
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1 Sep 2015|
|Publication type||A1 Journal article-refereed|
The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.
- A1. Defects, A1. Impurities, A3. Molecular beam epitaxy, B1. Phosphides, B2. Semiconducting III-V materials