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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

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Details

Original languageEnglish
Pages (from-to)60-63
JournalJournal of Crystal Growth
Volume425
DOIs
Publication statusPublished - 1 Sep 2015
Publication typeA1 Journal article-refereed

Abstract

The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

Keywords

  • A1. Defects, A1. Impurities, A3. Molecular beam epitaxy, B1. Phosphides, B2. Semiconducting III-V materials

Publication forum classification

Field of science, Statistics Finland