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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

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Original languageEnglish
Pages (from-to)60-63
JournalJournal of Crystal Growth
Publication statusPublished - 1 Sep 2015
Publication typeA1 Journal article-refereed


The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.


  • A1. Defects, A1. Impurities, A3. Molecular beam epitaxy, B1. Phosphides, B2. Semiconducting III-V materials

Publication forum classification

Field of science, Statistics Finland