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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells. / Tukiainen, Antti; Likonen, Jari; Toikkanen, Lauri; Leinonen, Tomi.

In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 60-63.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Tukiainen, A, Likonen, J, Toikkanen, L & Leinonen, T 2015, 'Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells', Journal of Crystal Growth, vol. 425, pp. 60-63. https://doi.org/10.1016/j.jcrysgro.2015.02.048

APA

Tukiainen, A., Likonen, J., Toikkanen, L., & Leinonen, T. (2015). Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells. Journal of Crystal Growth, 425, 60-63. https://doi.org/10.1016/j.jcrysgro.2015.02.048

Vancouver

Tukiainen A, Likonen J, Toikkanen L, Leinonen T. Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells. Journal of Crystal Growth. 2015 Sep 1;425:60-63. https://doi.org/10.1016/j.jcrysgro.2015.02.048

Author

Tukiainen, Antti ; Likonen, Jari ; Toikkanen, Lauri ; Leinonen, Tomi. / Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 60-63.

Bibtex - Download

@article{e046296b130444069c0d00fd07671331,
title = "Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells",
abstract = "The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.",
keywords = "A1. Defects, A1. Impurities, A3. Molecular beam epitaxy, B1. Phosphides, B2. Semiconducting III-V materials",
author = "Antti Tukiainen and Jari Likonen and Lauri Toikkanen and Tomi Leinonen",
year = "2015",
month = "9",
day = "1",
doi = "10.1016/j.jcrysgro.2015.02.048",
language = "English",
volume = "425",
pages = "60--63",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

AU - Tukiainen, Antti

AU - Likonen, Jari

AU - Toikkanen, Lauri

AU - Leinonen, Tomi

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

AB - The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

KW - A1. Defects

KW - A1. Impurities

KW - A3. Molecular beam epitaxy

KW - B1. Phosphides

KW - B2. Semiconducting III-V materials

UR - http://www.sciencedirect.com/science/article/pii/S0022024815001384

U2 - 10.1016/j.jcrysgro.2015.02.048

DO - 10.1016/j.jcrysgro.2015.02.048

M3 - Article

VL - 425

SP - 60

EP - 63

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -