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Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O: Crystalline oxidized InSb(100)(1 × 2)-O

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Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O : Crystalline oxidized InSb(100)(1 × 2)-O. / Lång, J. J K; Punkkinen, M. P J; Tuominen, M.; Hedman, H. P.; Vähä-Heikkilä, M.; Polojärvi, V.; Salmi, J.; Korpijärvi, V. M.; Schulte, K.; Kuzmin, M.; Punkkinen, R.; Laukkanen, P.; Guina, M.; Kokko, Kalevi.

In: Physical Review B, Vol. 90, No. 4, 045312, 29.07.2014, p. 1-9.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Lång, JJK, Punkkinen, MPJ, Tuominen, M, Hedman, HP, Vähä-Heikkilä, M, Polojärvi, V, Salmi, J, Korpijärvi, VM, Schulte, K, Kuzmin, M, Punkkinen, R, Laukkanen, P, Guina, M & Kokko, K 2014, 'Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O: Crystalline oxidized InSb(100)(1 × 2)-O', Physical Review B, vol. 90, no. 4, 045312, pp. 1-9. https://doi.org/10.1103/PhysRevB.90.045312

APA

Lång, J. J. K., Punkkinen, M. P. J., Tuominen, M., Hedman, H. P., Vähä-Heikkilä, M., Polojärvi, V., ... Kokko, K. (2014). Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O: Crystalline oxidized InSb(100)(1 × 2)-O. Physical Review B, 90(4), 1-9. [045312]. https://doi.org/10.1103/PhysRevB.90.045312

Vancouver

Author

Lång, J. J K ; Punkkinen, M. P J ; Tuominen, M. ; Hedman, H. P. ; Vähä-Heikkilä, M. ; Polojärvi, V. ; Salmi, J. ; Korpijärvi, V. M. ; Schulte, K. ; Kuzmin, M. ; Punkkinen, R. ; Laukkanen, P. ; Guina, M. ; Kokko, Kalevi. / Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O : Crystalline oxidized InSb(100)(1 × 2)-O. In: Physical Review B. 2014 ; Vol. 90, No. 4. pp. 1-9.

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@article{1e1df4cdbf9b40efa5bace4cf10981ff,
title = "Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O: Crystalline oxidized InSb(100)(1 × 2)-O",
abstract = "The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(1×2)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor- oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.0-2.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.5-3.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers. {\circledC} 2014 American Physical Society.",
author = "L{\aa}ng, {J. J K} and Punkkinen, {M. P J} and M. Tuominen and Hedman, {H. P.} and M. V{\"a}h{\"a}-Heikkil{\"a} and V. Poloj{\"a}rvi and J. Salmi and Korpij{\"a}rvi, {V. M.} and K. Schulte and M. Kuzmin and R. Punkkinen and P. Laukkanen and M. Guina and Kalevi Kokko",
note = "Contribution: organisation=orc,FACT1=1<br/>Portfolio EDEND: 2015-01-12<br/>Publisher name: American Physical Society",
year = "2014",
month = "7",
day = "29",
doi = "10.1103/PhysRevB.90.045312",
language = "English",
volume = "90",
pages = "1--9",
journal = "Physical Review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "4",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O

T2 - Crystalline oxidized InSb(100)(1 × 2)-O

AU - Lång, J. J K

AU - Punkkinen, M. P J

AU - Tuominen, M.

AU - Hedman, H. P.

AU - Vähä-Heikkilä, M.

AU - Polojärvi, V.

AU - Salmi, J.

AU - Korpijärvi, V. M.

AU - Schulte, K.

AU - Kuzmin, M.

AU - Punkkinen, R.

AU - Laukkanen, P.

AU - Guina, M.

AU - Kokko, Kalevi

N1 - Contribution: organisation=orc,FACT1=1<br/>Portfolio EDEND: 2015-01-12<br/>Publisher name: American Physical Society

PY - 2014/7/29

Y1 - 2014/7/29

N2 - The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(1×2)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor- oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.0-2.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.5-3.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers. © 2014 American Physical Society.

AB - The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(1×2)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor- oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.0-2.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.5-3.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers. © 2014 American Physical Society.

UR - http://www.scopus.com/inward/record.url?scp=84905484394&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.90.045312

DO - 10.1103/PhysRevB.90.045312

M3 - Article

VL - 90

SP - 1

EP - 9

JO - Physical Review B

JF - Physical Review B

SN - 1098-0121

IS - 4

M1 - 045312

ER -