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Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)361-365
Number of pages5
JournalOptical Materials
Volume64
DOIs
Publication statusPublished - 1 Feb 2017
Publication typeA1 Journal article-refereed

Abstract

The effects of 7 MeV electron irradiation at very high doses of 2×1017 and 1.5×1018electrons/cm2 and subsequent rapid thermal annealing on photoluminescence from a strain-compensated GaInAsN/GaAsN/GaAs quantum well structure are investigated. A large additional blueshift of photoluminescence has been observed from the lower-dose irradiated sample as compared to the non-irradiated one when annealed after the irradiation. This additional blueshift will become considerably reduced by an ageing effect, which occurs already at room temperature. The mechanism causing the additional blueshift of photoluminescence and its reduction is qualitatively assigned to metastable complex defects promoted by electron irradiation in the nitrogen containing layers. No such additional blueshift of photoluminescence under the thermal treatment has been observed in the higher-dose irradiated sample.

Keywords

  • Dilute nitrides, Electron irradiation, Photoluminescence

Publication forum classification

Field of science, Statistics Finland