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Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

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Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy. / Pavelescu, E. M.; Bălţăţeanu, N.; Spânulescu, S. I.; Arola, E.

In: Optical Materials, Vol. 64, 01.02.2017, p. 361-365.

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Pavelescu, E. M. ; Bălţăţeanu, N. ; Spânulescu, S. I. ; Arola, E. / Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy. In: Optical Materials. 2017 ; Vol. 64. pp. 361-365.

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@article{c05829384a5c48039b088916d25b2e98,
title = "Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy",
abstract = "The effects of 7 MeV electron irradiation at very high doses of 2×1017 and 1.5×1018electrons/cm2 and subsequent rapid thermal annealing on photoluminescence from a strain-compensated GaInAsN/GaAsN/GaAs quantum well structure are investigated. A large additional blueshift of photoluminescence has been observed from the lower-dose irradiated sample as compared to the non-irradiated one when annealed after the irradiation. This additional blueshift will become considerably reduced by an ageing effect, which occurs already at room temperature. The mechanism causing the additional blueshift of photoluminescence and its reduction is qualitatively assigned to metastable complex defects promoted by electron irradiation in the nitrogen containing layers. No such additional blueshift of photoluminescence under the thermal treatment has been observed in the higher-dose irradiated sample.",
keywords = "Dilute nitrides, Electron irradiation, Photoluminescence",
author = "Pavelescu, {E. M.} and N. Bălţăţeanu and Sp{\^a}nulescu, {S. I.} and E. Arola",
note = "EXT={"}Pavelescu, E. M.{"}",
year = "2017",
month = "2",
day = "1",
doi = "10.1016/j.optmat.2016.12.007",
language = "English",
volume = "64",
pages = "361--365",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

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TY - JOUR

T1 - Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

AU - Pavelescu, E. M.

AU - Bălţăţeanu, N.

AU - Spânulescu, S. I.

AU - Arola, E.

N1 - EXT="Pavelescu, E. M."

PY - 2017/2/1

Y1 - 2017/2/1

N2 - The effects of 7 MeV electron irradiation at very high doses of 2×1017 and 1.5×1018electrons/cm2 and subsequent rapid thermal annealing on photoluminescence from a strain-compensated GaInAsN/GaAsN/GaAs quantum well structure are investigated. A large additional blueshift of photoluminescence has been observed from the lower-dose irradiated sample as compared to the non-irradiated one when annealed after the irradiation. This additional blueshift will become considerably reduced by an ageing effect, which occurs already at room temperature. The mechanism causing the additional blueshift of photoluminescence and its reduction is qualitatively assigned to metastable complex defects promoted by electron irradiation in the nitrogen containing layers. No such additional blueshift of photoluminescence under the thermal treatment has been observed in the higher-dose irradiated sample.

AB - The effects of 7 MeV electron irradiation at very high doses of 2×1017 and 1.5×1018electrons/cm2 and subsequent rapid thermal annealing on photoluminescence from a strain-compensated GaInAsN/GaAsN/GaAs quantum well structure are investigated. A large additional blueshift of photoluminescence has been observed from the lower-dose irradiated sample as compared to the non-irradiated one when annealed after the irradiation. This additional blueshift will become considerably reduced by an ageing effect, which occurs already at room temperature. The mechanism causing the additional blueshift of photoluminescence and its reduction is qualitatively assigned to metastable complex defects promoted by electron irradiation in the nitrogen containing layers. No such additional blueshift of photoluminescence under the thermal treatment has been observed in the higher-dose irradiated sample.

KW - Dilute nitrides

KW - Electron irradiation

KW - Photoluminescence

U2 - 10.1016/j.optmat.2016.12.007

DO - 10.1016/j.optmat.2016.12.007

M3 - Article

VL - 64

SP - 361

EP - 365

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -