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V-groove etched 1-eV-GaInNAs nipi solar cell

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V-groove etched 1-eV-GaInNAs nipi solar cell. / Muhammetgulyyev, Agageldi ; Kinaci, Baris ; Aho, Arto; Yalcin, Yesim;  Cetinkaya, Caglar; Kuruoglu, Furkan; Guina, Mircea; Erol, Ayse.

In: Applied Physics A-Materials Science and Processing, Vol. 125, No. 1, 27, 2019.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Muhammetgulyyev, A, Kinaci, B, Aho, A, Yalcin, Y,  Cetinkaya, C, Kuruoglu, F, Guina, M & Erol, A 2019, 'V-groove etched 1-eV-GaInNAs nipi solar cell', Applied Physics A-Materials Science and Processing, vol. 125, no. 1, 27. https://doi.org/10.1007/s00339-018-2326-6

APA

Muhammetgulyyev, A., Kinaci, B., Aho, A., Yalcin, Y.,  Cetinkaya, C., Kuruoglu, F., ... Erol, A. (2019). V-groove etched 1-eV-GaInNAs nipi solar cell. Applied Physics A-Materials Science and Processing, 125(1), [27]. https://doi.org/10.1007/s00339-018-2326-6

Vancouver

Muhammetgulyyev A, Kinaci B, Aho A, Yalcin Y,  Cetinkaya C, Kuruoglu F et al. V-groove etched 1-eV-GaInNAs nipi solar cell. Applied Physics A-Materials Science and Processing. 2019;125(1). 27. https://doi.org/10.1007/s00339-018-2326-6

Author

Muhammetgulyyev, Agageldi  ; Kinaci, Baris  ; Aho, Arto ; Yalcin, Yesim ;  Cetinkaya, Caglar ; Kuruoglu, Furkan ; Guina, Mircea ; Erol, Ayse. / V-groove etched 1-eV-GaInNAs nipi solar cell. In: Applied Physics A-Materials Science and Processing. 2019 ; Vol. 125, No. 1.

Bibtex - Download

@article{b9fdd7572d784e13aae1ac7c694cca03,
title = "V-groove etched 1-eV-GaInNAs nipi solar cell",
abstract = "Simulated and experimental properties of a Ga1−xInxAs1−yNy nipi solar cell involving V-grooves for contact formation are reported. In particular, using a drift–diffusion model, we simulate the conversion efficiency, the short-circuit current density (JSC), and the open-circuit voltage (VOC) as a function of the number of nipi junctions. Based on the modelling results, optimized nipi solar cell incorporating five n–p junction pairs was grown on a p-type GaAs (100) substrate using molecular beam epitaxy (MBE). The bandgap of the nipi structure was determined to be 1 eV. The metal contacts of the nipi solar cell structure were processed in the form of mesa and V-groove. These shapes enable both vertical and horizontal carrier transport within the solar cell. The effect of thermal annealing on J–V characteristics of both type of devices is finally assessed. The results point out that the V-groove sample has better photovoltaic characteristics than the mesa structure sample.",
author = "Agageldi  Muhammetgulyyev and Baris  Kinaci and Arto Aho and Yesim Yalcin and Caglar  Cetinkaya and Furkan Kuruoglu and Mircea Guina and Ayse Erol",
year = "2019",
doi = "10.1007/s00339-018-2326-6",
language = "English",
volume = "125",
journal = "Applied Physics A-Materials Science and Processing",
issn = "0947-8396",
publisher = "Springer Verlag",
number = "1",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - V-groove etched 1-eV-GaInNAs nipi solar cell

AU - Muhammetgulyyev, Agageldi 

AU - Kinaci, Baris 

AU - Aho, Arto

AU - Yalcin, Yesim

AU -  Cetinkaya, Caglar

AU - Kuruoglu, Furkan

AU - Guina, Mircea

AU - Erol, Ayse

PY - 2019

Y1 - 2019

N2 - Simulated and experimental properties of a Ga1−xInxAs1−yNy nipi solar cell involving V-grooves for contact formation are reported. In particular, using a drift–diffusion model, we simulate the conversion efficiency, the short-circuit current density (JSC), and the open-circuit voltage (VOC) as a function of the number of nipi junctions. Based on the modelling results, optimized nipi solar cell incorporating five n–p junction pairs was grown on a p-type GaAs (100) substrate using molecular beam epitaxy (MBE). The bandgap of the nipi structure was determined to be 1 eV. The metal contacts of the nipi solar cell structure were processed in the form of mesa and V-groove. These shapes enable both vertical and horizontal carrier transport within the solar cell. The effect of thermal annealing on J–V characteristics of both type of devices is finally assessed. The results point out that the V-groove sample has better photovoltaic characteristics than the mesa structure sample.

AB - Simulated and experimental properties of a Ga1−xInxAs1−yNy nipi solar cell involving V-grooves for contact formation are reported. In particular, using a drift–diffusion model, we simulate the conversion efficiency, the short-circuit current density (JSC), and the open-circuit voltage (VOC) as a function of the number of nipi junctions. Based on the modelling results, optimized nipi solar cell incorporating five n–p junction pairs was grown on a p-type GaAs (100) substrate using molecular beam epitaxy (MBE). The bandgap of the nipi structure was determined to be 1 eV. The metal contacts of the nipi solar cell structure were processed in the form of mesa and V-groove. These shapes enable both vertical and horizontal carrier transport within the solar cell. The effect of thermal annealing on J–V characteristics of both type of devices is finally assessed. The results point out that the V-groove sample has better photovoltaic characteristics than the mesa structure sample.

U2 - 10.1007/s00339-018-2326-6

DO - 10.1007/s00339-018-2326-6

M3 - Article

VL - 125

JO - Applied Physics A-Materials Science and Processing

JF - Applied Physics A-Materials Science and Processing

SN - 0947-8396

IS - 1

M1 - 27

ER -