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TUTCRIS

A comparative study on electronic transport properties of n- and p-modulation doped Ga0.68In0.32As/GaAs and dilute nitride Ga0.68In0.32N0.012As0.988/GaAs Quantum well

Aktiviteetti: Konferenssiesitelmä

Yksityiskohdat

Janne Puustinen - Speaker

2012

Tapahtuma (null)

Teoksen nimiE-MRS 2012 Spring Meeting, Symposium T: Physics and Applications of Novel gain materials based on Nitrogen and Bismuth Containing III-V Compounds, May 14 - 18, 2012,Strasbourg, France
Ajanjakso1/01/12 → …

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Tutkijaan liittyvää

  1. Structural properties of annealed GaAsBi alloys

    Aktiviteetti: Konferenssiesitelmä

ID: 12315840