1180 nm GaInNAs quantum well based high power DBR laser diodes

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti ›

Standard

1180 nm GaInNAs quantum well based high power DBR laser diodes. / Viheriälä, Jukka; Aho, Antti; Virtanen, Heikki; Dumitrescu, Mihail; Guina, Mircea.

2017. Julkaisun esittämispaikka: SPIE Photonics West 2017, San Francisco, Yhdysvallat.

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti ›

Harvard

Viheriälä, J, Aho, A, Virtanen, H, Dumitrescu, M & Guina, M 2017, '1180 nm GaInNAs quantum well based high power DBR laser diodes' Artikkeli esitetty, San Francisco, Yhdysvallat, 28/01/17 - 2/02/17, .

APA

Viheriälä, J., Aho, A., Virtanen, H., Dumitrescu, M., & Guina, M. (2017). 1180 nm GaInNAs quantum well based high power DBR laser diodes. Julkaisun esittämispaikka: SPIE Photonics West 2017, San Francisco, Yhdysvallat.

Vancouver

Viheriälä J, Aho A, Virtanen H, Dumitrescu M, Guina M. 1180 nm GaInNAs quantum well based high power DBR laser diodes. 2017. Julkaisun esittämispaikka: SPIE Photonics West 2017, San Francisco, Yhdysvallat.

Author

Viheriälä, Jukka ; Aho, Antti ; Virtanen, Heikki ; Dumitrescu, Mihail ; Guina, Mircea. / 1180 nm GaInNAs quantum well based high power DBR laser diodes. Julkaisun esittämispaikka: SPIE Photonics West 2017, San Francisco, Yhdysvallat.

Bibtex - Lataa

@conference{909cfab731244dc49c7d6f4d30af60cb,

title = "1180 nm GaInNAs quantum well based high power DBR laser diodes",

abstract = "Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).",

keywords = "GaInNAs, DBR laser, DBR, SHG, 1180nm, 1178nm, 1154nm",

author = "Jukka Viheri{\"a}l{\"a} and Antti Aho and Heikki Virtanen and Mihail Dumitrescu and Mircea Guina",

year = "2017",

language = "English",

note = "SPIE Photonics West 2017 ; Conference date: 28-01-2017 Through 02-02-2017",

}

RIS (suitable for import to EndNote) - Lataa

TY - CONF

T1 - 1180 nm GaInNAs quantum well based high power DBR laser diodes

AU - Viheriälä, Jukka

AU - Aho, Antti

AU - Virtanen, Heikki

AU - Dumitrescu, Mihail

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).

AB - Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).

KW - GaInNAs

KW - DBR laser

KW - DBR

KW - SHG

KW - 1180nm

KW - 1178nm

KW - 1154nm

M3 - Paper, poster or abstract

ER -

TUTCRIS