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1180 nm GaInNAs quantum well based high power DBR laser diodes

Tutkimustuotosvertaisarvioitu

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1180 nm GaInNAs quantum well based high power DBR laser diodes. / Viheriälä, Jukka; Aho, Antti; Virtanen, Heikki; Koskinen, Mervi; Dumitrescu, Mihail; Guina, Mircea.

High-Power Diode Laser Technology XV. toim. / Mark S. Zediker. SPIE, 2017. 100860K (Proceedings of SPIE; Vuosikerta 10086).

Tutkimustuotosvertaisarvioitu

Harvard

Viheriälä, J, Aho, A, Virtanen, H, Koskinen, M, Dumitrescu, M & Guina, M 2017, 1180 nm GaInNAs quantum well based high power DBR laser diodes. julkaisussa MS Zediker (Toimittaja), High-Power Diode Laser Technology XV., 100860K, Proceedings of SPIE, Vuosikerta. 10086, SPIE, SPIE Photonics West, 1/01/00. https://doi.org/10.1117/12.2251317

APA

Viheriälä, J., Aho, A., Virtanen, H., Koskinen, M., Dumitrescu, M., & Guina, M. (2017). 1180 nm GaInNAs quantum well based high power DBR laser diodes. teoksessa M. S. Zediker (Toimittaja), High-Power Diode Laser Technology XV [100860K] (Proceedings of SPIE; Vuosikerta 10086). SPIE. https://doi.org/10.1117/12.2251317

Vancouver

Viheriälä J, Aho A, Virtanen H, Koskinen M, Dumitrescu M, Guina M. 1180 nm GaInNAs quantum well based high power DBR laser diodes. julkaisussa Zediker MS, toimittaja, High-Power Diode Laser Technology XV. SPIE. 2017. 100860K. (Proceedings of SPIE). https://doi.org/10.1117/12.2251317

Author

Viheriälä, Jukka ; Aho, Antti ; Virtanen, Heikki ; Koskinen, Mervi ; Dumitrescu, Mihail ; Guina, Mircea. / 1180 nm GaInNAs quantum well based high power DBR laser diodes. High-Power Diode Laser Technology XV. Toimittaja / Mark S. Zediker. SPIE, 2017. (Proceedings of SPIE).

Bibtex - Lataa

@inproceedings{d474de2cf68f43b487ca315d95b57af2,
title = "1180 nm GaInNAs quantum well based high power DBR laser diodes",
abstract = "We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.",
keywords = "DBR laser, dbr, 1180nm, 1178nm, 1154nm, SHG",
author = "Jukka Viheri{\"a}l{\"a} and Antti Aho and Heikki Virtanen and Mervi Koskinen and Mihail Dumitrescu and Mircea Guina",
note = "INT=fot,{"}Koskinen, Mervi{"}",
year = "2017",
month = "2",
day = "24",
doi = "10.1117/12.2251317",
language = "English",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Zediker, {Mark S.}",
booktitle = "High-Power Diode Laser Technology XV",
address = "United States",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - 1180 nm GaInNAs quantum well based high power DBR laser diodes

AU - Viheriälä, Jukka

AU - Aho, Antti

AU - Virtanen, Heikki

AU - Koskinen, Mervi

AU - Dumitrescu, Mihail

AU - Guina, Mircea

N1 - INT=fot,"Koskinen, Mervi"

PY - 2017/2/24

Y1 - 2017/2/24

N2 - We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.

AB - We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.

KW - DBR laser

KW - dbr

KW - 1180nm

KW - 1178nm

KW - 1154nm

KW - SHG

U2 - 10.1117/12.2251317

DO - 10.1117/12.2251317

M3 - Conference contribution

T3 - Proceedings of SPIE

BT - High-Power Diode Laser Technology XV

A2 - Zediker, Mark S.

PB - SPIE

ER -