TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

1180nm VECSEL with 50 W output power

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoProceedings of SPIE - The International Society for Optical Engineering
KustantajaSPIE
Vuosikerta9349
ISBN (painettu)9781628414394
DOI - pysyväislinkit
TilaJulkaistu - 2015
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaVertical External Cavity Surface Emitting Lasers - , Iso-Britannia
Kesto: 1 tammikuuta 2015 → …

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
MaaIso-Britannia
Ajanjakso1/01/15 → …

Tiivistelmä

We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.