TUTCRIS - Tampereen teknillinen yliopisto


1.3 μm InAs quantum dot semiconductor disk laser

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti


DOI - pysyväislinkit
TilaJulkaistu - 23 elokuuta 2016
Tapahtuma2016 International Conference Laser Optics, LO 2016 - St. Petersburg, Venäjä
Kesto: 27 kesäkuuta 20161 heinäkuuta 2016


Conference2016 International Conference Laser Optics, LO 2016
KaupunkiSt. Petersburg


Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.

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