TUTCRIS - Tampereen teknillinen yliopisto


1.3μm U-bend traveling wave SOA devices for high efficiency coupling to silicon photonics



OtsikkoSilicon Photonics XIV
ToimittajatGraham T. Reed, Andrew P. Knights
KustantajaSPIE, IEEE
ISBN (elektroninen)9781510624887
DOI - pysyväislinkit
TilaJulkaistu - 2019
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaSilicon Photonics - San Francisco, Yhdysvallat
Kesto: 4 helmikuuta 20196 helmikuuta 2019


NimiProceedings of SPIE - The International Society for Optical Engineering
ISSN (painettu)0277-786X
ISSN (elektroninen)1996-756X


ConferenceSilicon Photonics
KaupunkiSan Francisco


We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.