TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoProceedings of the 11th European Space Power Conference 2016
KustantajaEDP Sciences
DOI - pysyväislinkit
TilaJulkaistu - 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaEuropean Space Power Conference -
Kesto: 1 tammikuuta 2000 → …

Julkaisusarja

NimiE3S Web of Conferences
Vuosikerta16
ISSN (elektroninen)2267-1242

Conference

ConferenceEuropean Space Power Conference
Ajanjakso1/01/00 → …

Tiivistelmä

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

Julkaisufoorumi-taso

Latausten tilastot

Ei tietoja saatavilla