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35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V

Tutkimustuotosvertaisarvioitu

Standard

35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V. / Tchamov, N.; Jarske, P.

In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece. Rodos, Greece, 1996. s. 623-626.

Tutkimustuotosvertaisarvioitu

Harvard

Tchamov, N & Jarske, P 1996, 35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V. julkaisussa In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece. Rodos, Greece, Sivut 623-626.

APA

Tchamov, N., & Jarske, P. (1996). 35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V. teoksessa In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece (Sivut 623-626). Rodos, Greece.

Vancouver

Tchamov N, Jarske P. 35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V. julkaisussa In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece. Rodos, Greece. 1996. s. 623-626

Author

Tchamov, N. ; Jarske, P. / 35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V. In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece. Rodos, Greece, 1996. Sivut 623-626

Bibtex - Lataa

@inproceedings{1635135bbceb4538b6595c0fede56d20,
title = "35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V",
author = "N. Tchamov and P. Jarske",
note = "Contribution: organisation=tlt,FACT1=1",
year = "1996",
language = "English",
pages = "623--626",
booktitle = "In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - 35 dB / 3 GHz LNA on 0.8 BiCMOS with 8mW/2V

AU - Tchamov, N.

AU - Jarske, P.

N1 - Contribution: organisation=tlt,FACT1=1

PY - 1996

Y1 - 1996

M3 - Conference contribution

SP - 623

EP - 626

BT - In: IEEE International Conference on Electronics, Circuits and Systems October 13-16, 1996, Rodos, Greece

CY - Rodos, Greece

ER -