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50 W VECSEL emitting at 1180 nm

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50 W VECSEL emitting at 1180 nm. / Kantola, E.; Leinonen, T.; Penttinen, J.-P.; Tavast, M.; Ranta, S.; Guina, M.

2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany: CB_3_1. OSA, 2015.

Tutkimustuotosvertaisarvioitu

Harvard

Kantola, E, Leinonen, T, Penttinen, J-P, Tavast, M, Ranta, S & Guina, M 2015, 50 W VECSEL emitting at 1180 nm. julkaisussa 2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany: CB_3_1. OSA, EUROPEAN CONFERENCE ON LASERS AND ELECTRO-OPTICS AND THE EUROPEAN QUANTUM ELECTRONICS CONFERENCE, 1/01/00.

APA

Kantola, E., Leinonen, T., Penttinen, J-P., Tavast, M., Ranta, S., & Guina, M. (2015). 50 W VECSEL emitting at 1180 nm. teoksessa 2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany: CB_3_1 OSA.

Vancouver

Kantola E, Leinonen T, Penttinen J-P, Tavast M, Ranta S, Guina M. 50 W VECSEL emitting at 1180 nm. julkaisussa 2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany: CB_3_1. OSA. 2015

Author

Kantola, E. ; Leinonen, T. ; Penttinen, J.-P. ; Tavast, M. ; Ranta, S. ; Guina, M. / 50 W VECSEL emitting at 1180 nm. 2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany: CB_3_1. OSA, 2015.

Bibtex - Lataa

@inproceedings{9c7b08da70e1402287ebf14f0accf9c5,
title = "50 W VECSEL emitting at 1180 nm",
abstract = "We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.",
author = "E. Kantola and T. Leinonen and J.-P. Penttinen and M. Tavast and S. Ranta and M. Guina",
year = "2015",
language = "English",
isbn = "978-1-4673-7475-0",
booktitle = "2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany",
publisher = "OSA",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - 50 W VECSEL emitting at 1180 nm

AU - Kantola, E.

AU - Leinonen, T.

AU - Penttinen, J.-P.

AU - Tavast, M.

AU - Ranta, S.

AU - Guina, M.

PY - 2015

Y1 - 2015

N2 - We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.

AB - We report a 50 W VECSEL emitting at 1180 nm. The gain chip was grown by MBE and TEC-cooled. The maximum power was measured for a mount temperature of -15◦C.

UR - https://www.osapublishing.org/abstract.cfm?uri=CLEO_Europe-2015-CB_3_1

M3 - Conference contribution

SN - 978-1-4673-7475-0

BT - 2015 Conference on Lasers and Electro-Optics Europe - European Quantum Electronics Conference, 21.-25.6. Munich, Germany

PB - OSA

ER -