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>8W GaInNAs VECSEL emitting at 615 nm

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoProceedings of SPIE
AlaotsikkoVertical External Cavity Surface Emitting Lasers (VECSELs) V
KustantajaSPIE
Vuosikerta9349
ISBN (painettu)9781628414394
DOI - pysyväislinkit
TilaJulkaistu - 2015
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaVertical External Cavity Surface Emitting Lasers - , Iso-Britannia
Kesto: 1 tammikuuta 2015 → …

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
MaaIso-Britannia
Ajanjakso1/01/15 → …

Tiivistelmä

We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.