TUTCRIS - Tampereen teknillinen yliopisto


A 4.0/7.5-GHz Dual-Band LC VCO in 0.18-μm SiGe BiCMOS Technology



OtsikkoInternational Symposium on VLSI Design, Automation and Test
DOI - pysyväislinkit
TilaJulkaistu - 1 huhtikuuta 2013
Julkaistu ulkoisestiKyllä
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa


This letter presents a low phase noise BiCMOS dual-band voltage-controlled oscillator (VCO). The designed circuit consists of a dual-resonance LC resonator and a Colpitts negative resistance cell. The dual-resonance LC resonator comprises a series-tuned LC resonator and a parallel resonant resonator. The proposed VCO has been implemented with the TSMC 0.18 μπι SiGe 3P6M BiCMOS process. The VCO can generate differential signals in the frequency range of 3.91∼4.17 GHz and 7.24∼7.80GHz with core power consumption is 6.30mW and 5.88mW at the dc bias of 1.4 V respectively. At 4.0 GHz and 7.74 GHz, phase noise at 1MHz offset is-121.13dBc/Hz and-115.87dBc/GHz respectively. The die area of the dual-band VCO is 0.485×0.800 mm2